Density functional study of initial HfCl₄ adsorption and decomposition reactions on silicon surfaces with SiON interfacial layerJIE REN; BAO SUN; ZHANG, David Wei et al.Applied surface science. 2007, Vol 253, Num 23, pp 9148-9153, issn 0169-4332, 6 p.Article

Atomic-layer-deposited Al₂O₂-HfO₂ laminated and sandwiched dielectrics for metal-insulator-metal capacitorsDING, Shi-Jin; ZHANG, David Wei; WANG, Li-Kang et al.Journal of physics. D, Applied physics (Print). 2007, Vol 40, Num 4, pp 1072-1076, issn 0022-3727, 5 p.Article

Surface reaction mechanism of Y₂O₃ atomic layer deposition on the hydroxylated Si(100)-2 x 1: A density functional theory studyJIE REN; GUANGFEN ZHOU; YONGQI HU et al.Applied surface science. 2009, Vol 255, Num 16, pp 7136-7141, issn 0169-4332, 6 p.Article

A study of interface characteristics in HfAlO/p-Si by deep level transient spectroscopyNING ZHAN; MIN XU; ZHANG, David Wei et al.Applied surface science. 2008, Vol 254, Num 22, pp 7512-7515, issn 0169-4332, 4 p.Article

Effect of Pulse-Plated Nickel Barriers on Tin Whisker Growth for Pure Tin Solder JointsCHEN, Min-Na; DING, Shi-Jin; SUN, Qing-Qing et al.Journal of electronic materials. 2008, Vol 37, Num 6, pp 894-900, issn 0361-5235, 7 p.Article

Influence of NH₃ plasma treatment on chemical bonding and water adsorption of low-k SiCOH filmGUO, Hao-Wen; LIAN ZHU; LEI ZHANG et al.Microelectronic engineering. 2008, Vol 85, Num 10, pp 2114-2117, issn 0167-9317, 4 p.Conference Paper

Preparation of SrRuO₃ thin film by chemical reactive pulsed laser depositionXIAODONG FANG; TACHIKI, M; KOBAYASHI, T et al.Thin solid films. 2000, Vol 368, Num 2, pp 227-230, issn 0040-6090Conference Paper

Enhanced diamond film growth by Xe-added microwave plasma CVDHOSOMI, T; MAKI, T; KOBAYASHI, T et al.Thin solid films. 2000, Vol 368, Num 2, pp 269-274, issn 0040-6090Conference Paper

Aerosol and plasma assisted chemical vapor deposition process for multi-component oxide La_0.8Sr_0.2MnO₃ thin filmWANG, H. B; MENG, G. Y; PENG, D. K et al.Thin solid films. 2000, Vol 368, Num 2, pp 275-278, issn 0040-6090Conference Paper

Surface reactions in atomic layer deposition of HfO₂, ZrO₂ and Al₂O₃ on hydroxylated and sulfur-passivated GaAs(1 00) surfaces : A comparative study by density functional theoryJIE REN; GUANGFEN ZHOU; YONGQI HU et al.Applied surface science. 2008, Vol 254, Num 22, pp 7115-7121, issn 0169-4332, 7 p.Article

Effects of fluorine addition on driving force for CVD diamond growthLIU, Z.-J; DING, S.-J; WANG, P.-F et al.Thin solid films. 2000, Vol 368, Num 2, pp 208-210, issn 0040-6090Conference Paper

Development of diamond synthesis techniques at low pressuresMATSUMOTO, S.Thin solid films. 2000, Vol 368, Num 2, pp 231-236, issn 0040-6090Conference Paper

Microstructure and semiconducting properties of c-BN films using r.f. plasma CVD thermally assisted by a tungsten filamentWANG, W. L; LIAO, K. J; WANG, S. X et al.Thin solid films. 2000, Vol 368, Num 2, pp 283-286, issn 0040-6090Conference Paper

CVD diamond thin film for IR optics and X-ray opticsXUANTONG YING; XINMIN XU.Thin solid films. 2000, Vol 368, Num 2, pp 297-299, issn 0040-6090Conference Paper

Structure characteristic of buried SiC layersHUI YAN; BO WANG; XUEMEI SONG et al.Thin solid films. 2000, Vol 368, Num 2, pp 241-243, issn 0040-6090Conference Paper

Physical and electrical characterization of atomic-layer-deposited Ru nanocrystals embedded into Al₂O₃ for memory applicationsMIN ZHANG; WEI CHEN; DING, Shi-Jin et al.Journal of physics. D, Applied physics (Print). 2008, Vol 41, Num 3, issn 0022-3727, 032007.1-032007.5Article

Preparation and photoluminescence of the Ce-, Tb- and Gd-doped lanthanum borophosphate phosphorDING, Shi-Jin; ZHANG, David Wei; WANG, Peng-Fei et al.Materials chemistry and physics. 2001, Vol 68, Num 1-3, pp 98-104, issn 0254-0584Article

Effects at reactive ion etching of CVD diamondBELLO, I; FUNG, M. K; ZHANG, W. J et al.Thin solid films. 2000, Vol 368, Num 2, pp 222-226, issn 0040-6090Conference Paper

Comparison of deposition behavior of Pb(Zr, Ti)O₃ films and its end-member-oxide films prepared by MOCVDFUNAKUBO, H; NAGASHIMA, K; SHINOZAKI, K et al.Thin solid films. 2000, Vol 368, Num 2, pp 261-265, issn 0040-6090Conference Paper

Thermodynamics analyses of the effect of CH₃ and C₂H₂ on morphology of CVD diamond filmsZHANG, J.-Y; WANG, P.-F; DING, S.-J et al.Thin solid films. 2000, Vol 368, Num 2, pp 266-268, issn 0040-6090Conference Paper

Two-step growth of high quality diamond filmsLIAO, Y; CHANG, C; LI, C. H et al.Thin solid films. 2000, Vol 368, Num 2, pp 303-306, issn 0040-6090Conference Paper

Quantum chemical study of the initial surface reactions in atomic layer deposition of TiN on the SiO₂ surfaceLU, Hong-Liang; WEI CHEN; DING, Shi-Jin et al.Journal of physics. Condensed matter (Print). 2006, Vol 18, Num 26, pp 5937-5944, issn 0953-8984, 8 p.Article

Surface reaction mechanism of atomic layer deposition of HfO₂ on Ge(1 0 0)-2 × 1 : A density functional theory studyJIE REN; LU, Hong-Liang; WEI CHEN et al.Applied surface science. 2006, Vol 252, Num 24, pp 8466-8470, issn 0169-4332, 5 p.Article

Low dielectric constant SiO₂:C, F films prepared from Si(OC₂H₅)₄/C₄F₈/Ar by plasma-enhanced CVDDING, Shi-Jin; ZHANG, David Wei; WANG, Ji-Tao et al.Chemical vapor deposition (Print). 2001, Vol 7, Num 4, pp 142-146, issn 0948-1907Article

Characterization of elastic properties of hard carbon and boron nitride films using the Brillouin light scattering techniqueWITTKOWSKI, T; WIEHN, V; JORZICK, J et al.Thin solid films. 2000, Vol 368, Num 2, pp 216-221, issn 0040-6090Conference Paper